硅-藍輝(hui)石(shi)由(you)多晶硅隔熱(re)體(ti)設計元素(su)組(zu)成(cheng)(cheng)，不要形(xing)成(cheng)(cheng)滯緩、疲(pi)乏和(he)金屬疲(pi)勞現狀；藍輝(hui)石(shi)有了比較(jiao)好(hao)的(de)(de)活力和(he)隔熱(re)性(xing)質（1000℃元），對溫(wen)差造成(cheng)(cheng)改(gai)(gai)變(bian)(bian)不銘感(gan)(gan)，就是(shi)在(zai)(zai)高(gao)熱(re)生活條件下，同樣了挺好(hao)的(de)(de)操作性(xing)質；藍輝(hui)石(shi)的(de)(de)抗(kang)反射性(xing)質極富(fu)；別的(de)(de)，硅-藍輝(hui)石(shi)半導體(ti)行(xing)業銘感(gan)(gan)pcb板(ban)，無p-n漂移，因(yin)，可適(shi)用(yong)于各種類型更復雜工作環(huan)境的(de)(de)場(chang)所。傳紅外感(gan)(gan)應器(qi)器(qi)由(you)雙膜(mo)片(pian)(pian)(pian)組(zu)成(cheng)(cheng)：鈦(tai)(tai)碳素(su)鋼(gang)預(yu)估膜(mo)片(pian)(pian)(pian)和(he)鈦(tai)(tai)碳素(su)鋼(gang)發送膜(mo)片(pian)(pian)(pian)。柔印有異質本質性(xing)應變(bian)(bian)力靈敏性(xing)電(dian)橋三(san)極管(guan)的(de)(de)藍輝(hui)石(shi)膜(mo)片(pian)(pian)(pian)，被(bei)熔焊在(zai)(zai)鈦(tai)(tai)碳素(su)鋼(gang)預(yu)估膜(mo)片(pian)(pian)(pian)上(shang)(shang)。被(bei)測有經(jing)濟負擔(dan)(dan)拷貝到發送膜(mo)片(pian)(pian)(pian)上(shang)(shang)。在(zai)(zai)有經(jing)濟負擔(dan)(dan)的(de)(de)做用(yong)下，鈦(tai)(tai)碳素(su)鋼(gang)發送膜(mo)片(pian)(pian)(pian)誕(dan)生塑性(xing)變(bian)(bian)形(xing)，該塑性(xing)變(bian)(bian)形(xing)被(bei)硅-藍輝(hui)石(shi)銘感(gan)(gan)pcb板(ban)感(gan)(gan)覺后，其電(dian)橋打(da)出會形(xing)成(cheng)(cheng)造成(cheng)(cheng)改(gai)(gai)變(bian)(bian)，造成(cheng)(cheng)改(gai)(gai)變(bian)(bian)的(de)(de)增(zeng)長幅度與被(bei)測有經(jing)濟負擔(dan)(dan)相(xiang)等(deng)。電(dian)橋三(san)極管(guan)將電(dian)橋的(de)(de)失(shi)調(diao)電(dian)磁(ci)波，轉為(wei)為(wei)電(dian)壓降電(dian)磁(ci)波打(da)出。